Ab initio impact ionization rate in GaAs, GaN, and ZnS -: art. no. 085201

被引：12
作者：
Kuligk, A [1 ]
Fitzer, N [1 ]
Redmer, R [1 ]
机构：
[1] Univ Rostock, Inst Phys, D-18051 Rostock, Germany
来源：
PHYSICAL REVIEW B | 2005年 / 71卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.71.085201
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have performed extensive ab initio band structure calculations within density functional theory using an exact exchange formalism with a local density approximation for correlations. The wave-vector-dependent impact ionization rate is determined for GaAs, GaN, and ZnS. A strong asymmetry of the microscopic scattering rate as well as a pronounced influence of the band structure is found. We present also energy-averaged impact ionization rates which can be used in ensemble Monte Carlo simulations of high-field electron transport in these materials.
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页数：6
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