Electro- and magneto-transport properties of amorphous carbon films doped with iron

被引:28
作者
Wan, Caihua [1 ,3 ]
Zhang, Xiaozhong [1 ,3 ]
Vanacken, Johan [2 ]
Gao, Xili [1 ,3 ]
Zhang, Xin [1 ,3 ]
Wu, Lihua [1 ,3 ]
Tan, Xinyu [1 ,3 ]
Lin, Hong [1 ,4 ]
Moshchalkov, Victor V. [2 ]
Yuan, Jun [5 ]
机构
[1] Tsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
[2] Katholieke Univ Leuven, INPAC Inst Nonoscale Phys & Chem, B-3001 Louvain, Belgium
[3] Tsinghua Univ, Natl Ctr Electron Microscopy Beijing, Beijing 100084, Peoples R China
[4] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[5] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England
基金
美国国家科学基金会;
关键词
Amorphous carbon; Photovoltaic properties; Magnetoresistance; Anomalous Hall effect; DIAMOND-LIKE CARBON; SOLAR-CELLS; MAGNETORESISTANCE; CONDUCTIVITY; MODEL; CVD;
D O I
10.1016/j.diamond.2010.11.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electro- and magneto-transport properties of amorphous carbon films doped with iron element have been systematically studied. The electro-transport mechanism of the films is dominated by thermal activation at T > 200 K, Mott-type variable range hopping (VRH) at 200 K > T > 60 K and Efros-Shklovskii type (ES-) VRH at T < 60 K. An anomalous giant positive magnetoresistance (MR) 6.40% is found at the ES-VRH range, which is attributed to the spin blockage effect. At high temperatures, an anomalous Hall effect (AHE) is also found with a large AHE coefficiency 49.6 mu Omega cm/T. Electron energy loss spectroscopy (EELS) reveals that iron atoms chemically bond with carbon matrix. These iron carbides exist as amorphous nanoparticles with a diameter of 6-12 nm, which is regarded as the origin of the MR and AHE. Besides, the films are p-type conductive at high temperature, which might be related with the iron doping. These properties make iron doped amorphous carbon films applicable in carbon-based solar cells, magnetic sensors or some other multifunctional devices. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:26 / 30
页数:5
相关论文
共 18 条
  • [1] Disorder, clustering, and localization effects in amorphous carbon
    Carey, JD
    Silva, SRP
    [J]. PHYSICAL REVIEW B, 2004, 70 (23): : 1 - 8
  • [2] PI-BANDS AND GAP STATES FROM OPTICAL-ABSORPTION AND ELECTRON-SPIN-RESONANCE STUDIES ON AMORPHOUS-CARBON AND AMORPHOUS HYDROGENATED CARBON-FILMS
    DASGUPTA, D
    DEMICHELIS, F
    PIRRI, CF
    TAGLIAFERRO, A
    [J]. PHYSICAL REVIEW B, 1991, 43 (03): : 2131 - 2135
  • [3] Electron energy-loss spectroscopy in the TEM
    Egerton, R. F.
    [J]. REPORTS ON PROGRESS IN PHYSICS, 2009, 72 (01)
  • [4] Photovoltaic characteristics of boron-doped hydrogenated amorphous carbon on n-Si substrate prepared by rf plasma-enhanced CVD using trimethylboron
    Hayashi, Y
    Ishikawa, S
    Soga, T
    Umeno, M
    Jimbo, I
    [J]. DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 687 - 690
  • [5] Effect of work function and surface microstructure on field emission of tetrahedral amorphous carbon
    Ilie, A
    Hart, A
    Flewitt, AJ
    Robertson, J
    Milne, WI
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) : 6002 - 6010
  • [6] Electrical and optical properties of boronated tetrahedrally bonded amorphous carbon (ta-C:B)
    Kleinsorge, B
    Ilie, A
    Chhowalla, M
    Fukarek, W
    Milne, WI
    Robertson, J
    [J]. DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) : 472 - 476
  • [7] Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells
    Lee, CH
    Lim, KS
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (01) : 106 - 108
  • [8] MODEL FOR RAMAN-SCATTERING FROM INCOMPLETELY GRAPHITIZED CARBONS
    LESPADE, P
    ALJISHI, R
    DRESSELHAUS, MS
    [J]. CARBON, 1982, 20 (05) : 427 - 431
  • [9] Conductivity and magnetoresistance of FeSi in the Anderson-localized regime
    Lisunov, KG
    Arushanov, EK
    Kloc, C
    Broto, J
    Leotin, J
    Rokoto, H
    Respaud, M
    Bucher, E
    [J]. PHYSICA B, 1996, 229 (01): : 37 - 48
  • [10] MOVAGHAR B, 1978, J PHYS C SOLID STATE, V11, P125, DOI 10.1088/0022-3719/11/1/023