A 1.5-V HIGH-Q CMOS active inductor for IF/RF wireless applications

被引：10
|
作者：
Thanachayanont, A [1 ]
机构：
[1] King Mongkuts Inst Technol Ladkrabang, Fac Engn, Dept Elect Engn, Res Ctr Communicat & Informat Technol, Bangkok 10520, Thailand
来源：
2000 IEEE ASIA-PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS: ELECTRONIC COMMUNICATION SYSTEMS | 2000年
关键词：
D O I：
10.1109/APCCAS.2000.913605
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this paper, a new circuit configuration of VHF CMOS transistor-only active inductor which allows very high frequency operation under low power supply voltages (< 2 V) is proposed. Gain enhancement techniques are applied to reduce the inductor losses achieving high-Q and wide operating bandwidth. HSPICE simulations using process parameters from a 0.35-mum CMOS technology show that the proposed floating active inductor operates under a single 1.5-V power supply voltage, exhibiting a self-resonant frequency of 2.5 GHz and a quality factor greater than 120 (phase errors < 0.5 degrees) over the operating frequencies extending from 500 MHz to 1 GHz.
引用
收藏
页码：654 / 657
页数：4
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