Study of Nanowire Characteristics of a Junctionless Transistor Depending on the Gate Length

被引：0
作者：
Rusev, Rostislav [1 ]
Angelov, George [2 ]
Ruskova, Ivelina [2 ]
Gieva, Elitsa [2 ]
Nikolov, Dimitar [3 ]
Spasova, Mariya [2 ]
Hristov, Marin [2 ]
Radonov, Rosen [2 ]
机构：
[1] Tech Univ Sofia, Dept Technol & Management Commun Syst, Sofia, Bulgaria
[2] Tech Univ Sofia, Dept Microelect, Sofia, Bulgaria
[3] Tech Univ Sofia, Dept Elect, Sofia, Bulgaria
来源：
PROCEEDINGS OF THE 28TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2021) | 2021年
关键词：
junctionless transistor; nanowire; TCAD; 3D strucutre model; air sensor; SILICON;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Channel length influence on the nanowire parameters and characteristics at different gate voltages for applications in junctionless transistors (JLTs) are analyzed. The density-gradient effective mass tensor of the charge carriers is studied. The results obtained are used to indicate a compromise between performance and minimum dimensions for JLT sensor applications.
引用
收藏
页码：184 / 187
页数：4
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