Electrical characterization of irradiated prototype silicon pixel sensors for BTeV

The pixel detector in the BTeV experiment at the Tevatron (Fermilab) provides high-resolution tracking and vertex identification. For this task, the hybrid pixel detector has to work in a very harsh radiation environment with 1014 minimum ionizing particles/cm(2)/year. Radiation hardness of prototype n(+)/n/p(+) silicon pixel sensors has been investigated. We present electrical characterization curves for irradiated prototype n(+)/n/p(+) sensors, intended for use in the BTeV experiment. We tested pixel sensors from various vendors and with two pixel isolation techniques: p-stop and p-spray. Results are based on irradiation with 200 MeV protons up to 6 x 10(14) protons/cm(2).