CNT integration on different materials suitable for VLSI interconnects

被引：2

作者：

Okuno, Hanako ^{[1
]}

Fournier, Adeline ^{[1
]}

Quesnel, Etienne ^{[1
]}

Muffato, Viviane ^{[1
]}

Le Poche, Helene ^{[1
]}

Fayolle, Murielle ^{[2
]}

Dijon, Jean ^{[1
]}

机构：

[1] CEA, LITEN, DTNM, F-38054 Grenoble 9, France

[2] CEA, LETI, F-38054 Grenoble 9, France

来源：

COMPTES RENDUS PHYSIQUE | 2010年 / 11卷 / 5-6期

关键词：

Carbon nanotubes; Via interconnects; Integration; CVD; CARBON NANOTUBES; FABRICATION;

D O I：

10.1016/j.crhy.2010.06.008

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

We have succeeded in direct integration of carbon nanotubes (CNTs) for via interconnects using different back contact materials. Highly doped Si and poly Si are used, aiming at the CNT via interconnects directly from source, drain and gate of transistors. In addition, we propose to use aluminum copper alloy (AlCu) as a metal line because of its higher conductivity compared that of copper in very small geometries. The experimental conditions for CNT growth are optimized on these three substrate materials, which are applied for the direct integration in via holes with success. The achieved density in 1 pm via holes is more than 10(12) cm(-2), the highest value reported so far. (C) 2010 Academie des sciences. Published by Elsevier Masson SAS. All rights reserved.

引用

页码：381 / 388

页数：8

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