On an electron in a nonuniform axial magnetic field in a uniformly rotating frame

被引：4

作者：

Bakke, K. ^{[1
]}

Ribeiro, R. F. ^{[1
]}

Salvador, C. ^{[1
]}

机构：

[1] Univ Fed Paraiba, Dept Fis, Caixa Postal 5008, BR-58051900 Joao Pessoa, Paraiba, Brazil

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS A | 2019年 / 34卷 / 33期

关键词：

Rotating effects; analytical solutions; biconfluent Heun equation; point charge (electrons or holes); QUANTUM PHASE; CHARGED-PARTICLE; GLOBAL MONOPOLE; EARTHS ROTATION; LANDAU-LEVELS; DEFECTS; DISLOCATIONS; QUANTIZATION; MOMENT;

D O I：

10.1142/S0217751X19502294

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

The interaction of an electron with a nonuniform axial magnetic field is analyzed in a uniformly rotating frame. In particular, the magnetic field is proportional to the square of the radial distance from the symmetry axis. Then, in search of analytical solutions to the Schrodinger equation, it is shown that these solutions are possible if the nonuniform magnetic field possesses a discrete set of values.

引用

页数：8

共 48 条

[41] Analytic and numeric Green's functions for a two-dimensional electron gas in an orthogonal magnetic field [J].

Cresti, A ;

Grosso, G ;

Parravicini, GP .

ANNALS OF PHYSICS, 2006, 321 (05) :1075-1091

[42] Gravitational field effects produced by topologically nontrivial rotating space-time under magnetic and quantum flux fields on quantum oscillator [J].

Ahmed, Faizuddin .

INTERNATIONAL JOURNAL OF MODERN PHYSICS A, 2022, 37 (28-29)

[43] Adiabatic invariant of electron motion in slowly varying magnetic field studied with the squeezing mechanism in entangled state representation [J].

Xu, Xue-Fen ;

Fan, Hong-Yi .

OPTIK, 2017, 135 :383-388

[44] NEUTRAL STREAM EXTRACTION FROM ELECTRON-CYCLOTRON-RESONANCE PLASMA BY USING PARALLEL MAGNETIC-FIELD [J].

JIN, Y ;

TSUCHIZAWA, T ;

MATSUO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (4A) :L465-L467

[45] Lorentz shear modulus of a two-dimensional electron gas at high magnetic field (vol 76, 161305, 2007) [J].

Tokatly, I. V. ;

Vignale, G. .

PHYSICAL REVIEW B, 2009, 79 (19)

[46] Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime [J].

van Beveren, Laurens H. Willems ;

Tan, Kuan Y. ;

Lai, Nai-Shyan ;

Klochan, Oleh ;

Dzurak, Andrew S. ;

Hamilton, Alex R. .

ADVANCED MATERIALS AND NANOTECHNOLOGY, 2012, 700 :93-+

[47] Quantum transport in chemically functionalized graphene at high magnetic field: defect-induced critical states and breakdown of electron-hole symmetry [J].

Leconte, Nicolas ;

Ortmann, Frank ;

Cresti, Alessandro ;

Charlier, Jean-Christophe ;

Roche, Stephan .

2D MATERIALS, 2014, 1 (02)

[48] Study on the effect of high magnetic field on electron transport in lattice mismatched n-GaN grown on sapphire based on two-layer model [J].

Chakraborty, A. ;

Sarkar, C. K. .

PHYSICA B-CONDENSED MATTER, 2009, 404 (8-11) :1148-1153

← 1 2 3 4 5 →