Determining junction temperature based on material properties and geometric structures of LEDs

被引：4
作者：
Ho, Ching-Yen [1 ,2 ]
Wan, Song-Feng [1 ]
Chen, Bor-Chyuan [3 ]
Li, Long-Gen [1 ]
Fan, Si-Li [1 ]
Xiong, Chang-Wei [1 ]
机构：
[1] Dongguan Polytech, Dept Mech & Elect Engn, Dongguan 523808, Peoples R China
[2] Hwa Hsia Univ Technol, Dept Mech Engn, Taipei 235, Taiwan
[3] Buddhist Dalin Tzu Chi Gen Hosp, Dept Chinese Med, Chiayi 622, Taiwan
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2018年 / 50卷 / 11期
关键词：
LED; Material properties; Geometric structures; Junction temperature; LIGHT-EMITTING-DIODES; ALGAINP;
D O I：
10.1007/s11082-018-1663-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on the material properties and geometric structures of LEDs, this paper proposes an analytical model for predicting the junction temperature. The parameters relevant to the junction temperature are calculated using the material properties and geometric structures of LEDs. The junction temperature of AlGaInP LED predicted from this work agrees with the available experimental data. Effects of LED working parameters and material properties on the junction temperatures are discussed in this study.
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收藏
页数：11
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