Oxygen migration at Pt/HfO2/Pt interface under bias operation

被引：58
|
作者：
Nagata, T. [1 ]
Haemori, M. [1 ]
Yamashita, Y. [1 ,2 ]
Yoshikawa, H. [2 ]
Iwashita, Y. [1 ,3 ]
Kobayashi, K. [2 ]
Chikyow, T. [1 ]
机构：
[1] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
[2] Natl Inst Mat Sci, NIMS Beamline Stn SPring 8, Sayo, Hyogo 6795148, Japan
[3] Meiji Univ, Sch Sci & Technol, Tama Ku, Kanagawa 2148571, Japan
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 08期
关键词：
electrical conductivity; hafnium compounds; interface states; MIM devices; platinum; X-ray photoelectron spectra; X-RAY PHOTOEMISSION; FILMS; OXIDE; ENTHALPY; MEMORY;
D O I：
10.1063/1.3483756
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The interfacial electronic states of a Pt/HfO2/Pt diode were investigated by using hard x-ray photoelectron spectroscopy under bias operation. The application of a forward bias to the Pt/HfO2/Pt diode increased the Pt-O bonding peak, providing evidence of Pt electrode oxidization and oxygen vacancy formation around the Pt/HfO2 interface. Under a reverse bias, hafnium was drawn to the Pt electrode, where it took part in Hf-Pt bonding. We achieved the direct observation of oxygen migration at a Pt/HfO2 interface under device operation, which is the key to controlling the electrical properties of metals on oxides.
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页数：3
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