Investigation of the "composition-pulling or lattice-latching" effect in LPE

被引:7
作者
Rodríguez-Torres, MDP
Gorbatchev, AY
Mishurnyi, VA
de Anda, F
Mendez-García, VH
Asomoza, R
Kudriavtsev, Y
Hernandez, IC
机构
[1] UASLP, IICO, San Luis Potosi 78210, SLP, Mexico
[2] IPN, CINVESTAV, Mexico City 07360, DF, Mexico
[3] Lasertel Inc, Tucson, AZ 85743 USA
关键词
solidification; liquid phase epitaxy; semiconducting III-V materials;
D O I
10.1016/j.jcrysgro.2005.01.092
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A study of the "composition-pulling or lattice-latching" effect has been done for the case of GaInP epitaxial layers grown on GaAs and GaInAs substrates. The layers were grown simultaneously on two different substrates placed side by side under the same liquid solution. The layers were characterized by photoluminescence, secondary ion mass spectroscopy (SIMS) and X-ray diffraction. The chemical compositions of the layers were different for samples grown on substrates with different lattice constant. Moreover, the thickness of the epitaxial and of the transition layers also depends on the kind of substrate. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:138 / 142
页数:5
相关论文
共 9 条
[1]   GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (001), (111)A, AND (111)B GAAS SUBSTRATES [J].
ASAI, H ;
OE, K .
JOURNAL OF CRYSTAL GROWTH, 1983, 62 (01) :67-74
[2]   GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES [J].
ASAI, H ;
OE, K .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6849-6851
[3]   Crystallization of the AxIIIB1-xIIICV alloys from the supercooled liquid solutions [J].
Asomoza, R ;
Elyukhin, VA ;
Martinez-Juarez, J ;
Peña-Sierra, R .
JOURNAL OF CRYSTAL GROWTH, 2001, 231 (04) :458-465
[4]  
BENEKING H, 1975, S GAAS RELATED COMPO, P113
[5]  
COLEMAN JJ, 1975, IEEE J QUANTUM ELECT, VQE11, P471, DOI 10.1109/JQE.1975.1068650
[6]  
HITCHENS WR, 1974, J CRYST GROWTH, V27, P154, DOI 10.1016/S0022-0248(74)80060-6
[7]   IMPORTANCE OF LATTICE MISMATCH IN GROWTH OF GAXIN1-XP EPITAXIAL CRYSTALS [J].
STRINGFELLOW, GB .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3455-+
[8]   Influence of substrate conductivity on layer thickness in LPE GaAs [J].
Vera-Hernández, J ;
de Jesús, P ;
de Anda, F ;
Rojas-López, M .
JOURNAL OF CRYSTAL GROWTH, 2004, 268 (3-4) :375-377
[9]   LIQUID-PHASE-EPITAXIAL GROWTH OF INO.49GA0.51 P ON (100) GAAS BY A SUPERCOOLING METHOD [J].
WU, MC ;
SU, YK ;
CHENG, KY ;
CHANG, CY .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) :1537-1541