Semi-insulating CdTe with a minimum deep level doping

被引：5

作者：

Grill, R ^{[1
]}

Franc, J ^{[1
]}

Turkevych, I ^{[1
]}

Höschl, P ^{[1
]}

Belas, E ^{[1
]}

Moravec, P ^{[1
]}

机构：

[1] Charles Univ, Inst Phys, CR-12116 Prague, Czech Republic

来源：

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 5 | 2005年 / 2卷 / 05期

关键词：

D O I：

10.1002/pssc.200460830

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Quasichemical formalism is used to study self-compensation and reactions of point defects during annealing and successive cooling with aim to find a technique to prepare semi-insulating CdTe (SICT) with minimized deep level doping. We present a theoretical model which provides SICT also in 7N or less purity material with deep level density below the limit 10(13) cm(-3) which is demanded for detector grade CdTe. The principle of the method is based on a proper thermal treatment with the low temperature dwell and the defect reaction between shallow acceptor Cd vacancies and shallow donor Te antisite. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1489 / 1494

页数：6

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