Theoretical analysis of ultra low-k porous films with periodic pore arrangement and high elastic modulus

被引：7

作者：

Miyoshi, H ^{[1
]}

Matsuo, H ^{[1
]}

Oku, Y ^{[1
]}

Tanaka, H ^{[1
]}

Yamada, K ^{[1
]}

Mikami, N ^{[1
]}

Takada, S ^{[1
]}

Hata, N ^{[1
]}

Kikkawa, T ^{[1
]}

机构：

[1] ASET, MIRAI Project, Tsukuba, Ibaraki 3058569, Japan

来源：

PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2003年

关键词：

D O I：

10.1109/IITC.2003.1219712

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We have demonstrated that the periodicity in pore structure increases the elastic modulus E with maintaining the dielectric constant k by analytical and numerical calculations. The periodic porous silica films having the hexagonal arrangement of circular cylindrical pores with k < 2.0 and E > 3 GPa is feasible at the porosity of 0.62 with the bulk material of k(b) = 4.0 and E-b > 21 GPa. Calculation results have been confirmed with the experimental data by taking into account the experimental pore shape. The periodic porous silica films having the three-dimensional cubic structure of spherical pores with k < 2.0 and E > 3GPa is feasible at the porosity of 0.60 using the bulk material of k(b) = 4.0 and E-b > 12 GPa.

引用

页码：57 / 59

页数：3

共 24 条

[1]

AOI N, IITC2002, P72

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