Numerical study of magnetic field effect on graphene based IMPATT source

被引：4
作者：
Ghivela, Girish Chandra [1 ]
Sengupta, Joydeep [1 ]
机构：
[1] Visvesvaraya Natl Inst Technol, Dept Elect & Commun Engn, Nagpur 440010, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2020年 / 137卷
关键词：
Graphene; IMPact avalanche transit time (IMPATT); Magnetic field; Power density; Drift; MILLIMETER-WAVE; OPTICAL CONTROL; INJECTION;
D O I：
10.1016/j.spmi.2019.106365
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Computational effect of transverse magnetic field on the performances of graphene based Impact Avalanche Transit Time (IMPATT) diode has been studied here. Detailed analysis due to magnetic field effects are presented based on a three dimensional mathematical model. Power density, dc to rf conversion efficiency, susceptance-conductance profile, drops across drift and avalanche zones are analyzed due to carrier deflections caused by magnetic field. From the computation, an upward frequency shifting of 0.1 GHz is observed due to 1 T magnetic field variation. Degradation in conversion efficiency with increment in magnetic field value has been noticed. By increasing the field effect, power density value increases. These behaviors of graphene IMPATT are in good agreement with earlier reported experimental results.
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收藏
页数：7
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