Numerical study of magnetic field effect on graphene based IMPATT source

Computational effect of transverse magnetic field on the performances of graphene based Impact Avalanche Transit Time (IMPATT) diode has been studied here. Detailed analysis due to magnetic field effects are presented based on a three dimensional mathematical model. Power density, dc to rf conversion efficiency, susceptance-conductance profile, drops across drift and avalanche zones are analyzed due to carrier deflections caused by magnetic field. From the computation, an upward frequency shifting of 0.1 GHz is observed due to 1 T magnetic field variation. Degradation in conversion efficiency with increment in magnetic field value has been noticed. By increasing the field effect, power density value increases. These behaviors of graphene IMPATT are in good agreement with earlier reported experimental results.