Memory properties of a ferroelectric gate field-effect transistor with an adjoining metal-ferroelectric-metal assistance cell

被引：12

作者：

Xiong, SB ^{[1
]}

Sakai, S ^{[1
]}

Ishii, K ^{[1
]}

Migita, S ^{[1
]}

Sakamaki, K ^{[1
]}

Ota, H ^{[1
]}

Suzuki, E ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 04期

关键词：

D O I：

10.1063/1.1592606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We prepared a ferroelectric gate field-effect transistor (FET) memory that consists of a normal metal-ferroelectric-metal-insulator-Si FET and an adjoining metal-ferroelectric-metal auxiliary cell. Due to this cell, the FET exhibited excellent nonvolatile memory properties of low-voltage operation and a long period of retention. After writing-voltage application of +/-4 V, the drain current ratio between "ON" and "OFF" states was as large as six orders of magnitude and the memory window (difference in threshold voltage) was 3 V. Even 10(4) s after writing, the ON state drain current could be distinguished as being three orders different from the OFF state current. The ferroelectric FET with the auxiliary cell that demonstrated good nonvolatile properties has potential for application in high-density nonvolatile memories. (C) 2003 American Institute of Physics.

引用

页码：2559 / 2562

页数：4

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