Characterization of Co:TiO2 Thin Film Grown by MOCVD Technique

被引：0

作者：

Saripudin, A. ^{[1
]}

Purnama, W. ^{[1
]}

机构：

[1] Univ Pendidikan Indonesia, Program Studi Tekn Elektro, Fak Pendidikan Teknol & Kejuruan, 3rd Floor FPTK Bldg,Jl Dr Setiabudhi 229, Bandung 40154, Indonesia

来源：

2ND INTERNATIONAL CONFERENCE ON INNOVATION IN ENGINEERING AND VOCATIONAL EDUCATION | 2018年 / 306卷

关键词：

TIO2;

D O I：

10.1088/1757-899X/306/1/012007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Co:TiO2 thin film was grown on n-type Si(100) by metal organic chemical vapor deposition (MOCVD) technique. The film's growth parameters are as follow: substrate temperature of 450 degrees C, bubbler temperature of 70 degrees C, reactor chamber pressure of 2 militorr, and growth time of 2 hours. We characterized the structure of film by X-ray Difractometer (XRD), the morphology was characterized by Scanning Electron Microscope (SEM), and the fraction of Co atoms in TiO2 was characterized by Energy Dispersive x-ray Spectroscopy (EDS). The XRD result shows that the Co:TiO2 thin film is an anatase phase crystal dominated by A(213) orientation. Using Warren-Scherrer's formula, the average grain size of Co:TiO2 is 169 nm. The SEM result shows that the Co:TiO2 film surface is quite coarse with relatively homogeneous grain shape. the average growth rate of Co:TiO2 film is 0.78 mu m/h. In addition, the EDS result shows that Co atoms have been incorporated into the film replacing a portion of the Ti atoms by 0.085%.

引用

页数：4

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