Improved technology management through physico-chemical process modeling

被引:0
作者
Egan, EW [1 ]
机构
[1] React Design, San Diego, CA 92121 USA
来源
THIRD INTERNATIONAL CONFERENCE ON FOUNDATIONS OF COMPUTER-AIDED PROCESS OPERATIONS | 1998年 / 94卷 / 320期
关键词
chemical process; chemical reaction; chemical kinetics; modeling; simulation; software; microelectronics; uncertainty; technology management; decision-making;
D O I
暂无
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
Today we make more decisions than ever which challenge us to locate or generate the right knowledge, at the right time, organized in a form suitable for managing technical progress. Physico-chemical modeling, when effectively implemented, improves the knowledge content of decisions and limits the risk of technology management error. Effective implementation requires four critical elements. First, a hybrid approach must be created which integrates modeling capability with empirical methods to leverage the synergy between the two for maximum value. Second, the hybrid capability must be accessible directly by technology managers, developers and practitioners to facilitate sharing of "common" knowledge. Third, the uncertainty associated with assumptions and inputs to the empirical and modeling components must be quantified to improve a user's ability to direct resources to the most "uncertain" topics and to integrate risk assessment into their decisions. Fourth, and most important, this hybrid approach must be built into the technology plan through all of its phases, from evaluation to production. A prototype structure will be described and examples of partial use of the approach in the microelectronics industry will be described. Observations of how full implementation would improve the return on investment will also be noted.
引用
收藏
页码:44 / 59
页数:16
相关论文
共 34 条
  • [1] AMSDEN AA, 1993, LA12503MS LOS AL NAT
  • [2] [Anonymous], HARVARD BUS REV
  • [3] Nonlinear model reduction strategies for rapid thermal processing systems
    Banerjee, S
    Cole, JV
    Jensen, KF
    [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1998, 11 (02) : 266 - 275
  • [4] Bindra A, 1998, ELECTRON DES, V46, P35
  • [5] CALE TS, 1996, THIN FILMS, V22, P175, DOI DOI 10.1016/S1079-4050(96)80006-8
  • [6] CORONELL DG, 1998, IN PRESS THIN SOLIDF
  • [7] LOW-DIMENSIONAL MODELS FOR COMPLEX-GEOMETRY FLOWS - APPLICATION TO GROOVED CHANNELS AND CIRCULAR-CYLINDERS
    DEANE, AE
    KEVREKIDIS, IG
    KARNIADAKIS, GE
    ORSZAG, SA
    [J]. PHYSICS OF FLUIDS A-FLUID DYNAMICS, 1991, 3 (10): : 2337 - 2354
  • [8] DEJULE R, 1997, SEMICONDUCTOR INT, V20, P55
  • [9] Full copper wiring in a sub-0.25 μm CMOS ULSI technology
    Edelstein, D
    Heidenreich, J
    Goldblatt, R
    Cote, W
    Uzoh, C
    Lustig, N
    Roper, P
    McDevitt, T
    Motsiff, W
    Simon, A
    Dukovic, J
    Wachnik, R
    Rathore, H
    Schulz, R
    Su, L
    Luce, S
    Slattery, J
    [J]. INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 773 - 776
  • [10] The effect of multilayer patterns on temperature uniformity during rapid thermal processing
    Hebb, JP
    Jensen, KF
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (03) : 1142 - 1151