Photodetachment of H- near a soft wall

被引：16
|
作者：
Yang, Guangcan [1 ]
Zheng, Yizhuang [1 ]
Chi, Xianxing [1 ]
机构：
[1] Wenzhou Univ, Sch Phys & Elect Informat, Wenzhou 325027, Peoples R China
来源：
JOURNAL OF THEORETICAL & COMPUTATIONAL CHEMISTRY | 2007年 / 6卷 / 02期
关键词：
photodetachment; inelastic interface; semiclassical theory;
D O I：
10.1142/S0219633607002939
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We investigate the photodetachment of H- near an inelastic interface semiclassically. It is found that the inelasticity of an interface has significant influence on the photodetachment process. We have derived an analytical formula of the cross section of photodetachment. The spectrum of photodetachment consists of a smooth background and a sinusoidal oscillation whose frequency depends on the electronic energy, the reflection of the wall and the distance between the ion and the wall.
引用
收藏
页码：353 / 362
页数：10
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