Unveiling Structurally Engineered Carrier Dynamics in Hybrid Quasi-Two-Dimensional Perovskite Thin Films toward Controllable Emission

被引:162
作者
Shang, Qiuyu [1 ]
Wang, Yunuan [1 ,2 ]
Zhong, Yangguang [1 ,3 ]
Mi, Yang [3 ]
Qin, Liang [3 ]
Zhao, Yuefeng [2 ]
Qui, Xiaohui [3 ]
Liu, Xinfeng [3 ]
Zhang, Qing [1 ,4 ]
机构
[1] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
[2] Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Shandong, Peoples R China
[3] Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China
[4] Peking Univ, Res Ctr Wide Gap Semicond, Beijing 100871, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2017年 / 8卷 / 18期
基金
中国国家自然科学基金;
关键词
ELECTRON; EFFICIENCY; PHOTOLUMINESCENCE; CH3NH3PBI3; STABILITY; LENGTHS; STATES; ROOM;
D O I
10.1021/acs.jpclett.7b01857
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Quasi-two-dimensional Ruddlesden-Popper perovskites driving carrier self separation have rapidly advanced the development of high-performance optoelectronic devices. However, insightful understanding of carrier dynamics in the perovskites is still inadequate. The distribution of multiple perovskite phases, crucial for carrier separation, is controversial. Here we report a systematic study on carrier dynamics of spin-coated (C6H5CH2CH2NH3)(2)(CH3NH3)(n-1)PbnI3n+1 (n = 3 and 5) perovskite thin films. Efficient electrons transfer from small-n to large-n perovskite phases, and holes transfer reversely with time scales from similar to 0.3 to 30.0 ps. The multiple perovskite phases are arranged perpendicularly to substrate from small to large n and also coexist randomly in the same horizontal planes. Further, the carrier separation dynamics is tailored by engineering the crystalline structure of the perovskite film, which leads to controllable emission properties. These results have important significance for the design of optoelectronic devices from solar cells, light-emitting diodes, lasers, and so forth.
引用
收藏
页码:4431 / 4438
页数:8
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