Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy

被引：20
作者：
Stangl, J
Roch, T
Bauer, G
Kegel, I
Metzger, TH
Schmidt, OG
Eberl, K
Kienzle, O
Ernst, F
机构：
[1] Johannes Kepler Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria
[2] Univ Munich, Sekt Phys, D-80539 Munich, Germany
[3] Univ Munich, CeNS, D-80539 Munich, Germany
[4] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[5] Max Planck Inst Met Forsch, D-70174 Stuttgart, Germany
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 24期
关键词：
D O I：
10.1063/1.1333683
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the vertical correlation properties of SiGe islands in a series of Si/SiGe multilayers using grazing incidence x-ray diffraction. The degree of island correlation is found to strongly depend on the thickness of the Si spacer layer separating subsequent SiGe layers. A comparison with results obtained from transmission electron microscopy demonstrates the feasibility of the x-ray diffraction method for the investigation of sample series, and an improved statistical accuracy of the obtained parameters: with x-ray diffraction, the statistical average of typically 10(6)-10(7) island columns is obtained, compared to only few in the case of transmission electron microscopy. (C) 2000 American Institute of Physics. [S0003-6951(00)00252-7].
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页码：3953 / 3955
页数：3
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