Multi-channel AlGaN/GaN Schottky barrier diodes with a half through-hole

被引:9
作者
Liu, Yuebo [1 ]
Yao, Wanqing [1 ]
Liu, Honghui [1 ]
Yang, Longkun [1 ]
Liu, Shangfeng [3 ,4 ]
Yang, Liuyun [3 ,4 ]
Wang, Fengge [1 ]
Ren, Yuan [1 ]
Shen, Junyu [1 ]
Zhang, Minjie [1 ]
Wu, Zhisheng [1 ,2 ]
Liu, Yang [1 ,2 ]
Wang, Qi [5 ]
Wang, Xinqiang [3 ,4 ]
Zhang, Baijun [1 ,2 ]
机构
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China
[2] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
[3] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[4] Peking Univ, Sch Phys, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China
[5] Peking Univ, Dongguan Inst Optoelect, Dongguan 523808, Peoples R China
关键词
Multi-channel; AlGaN; GaN SBDs; 2DEG; Cutoff frequency; MILLIMETER-WAVE; GAN; FREQUENCY; MICROWAVE; CIRCUITS;
D O I
10.1016/j.mssp.2021.105934
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The cutoff frequency of Schottky barrier diode (SBD) depends on its junction capacitance and series resistance. The two-dimensional electron gas (2DEG) at AlGaN/GaN interface has high carrier mobility and carrier concentration. However, AlGaN/GaN heterostructure SBD usually shows a high series resistance because of the thin 2DEG channel. In this work, multiple AlGaN/GaN heterojunctions are vertically stacked for forming multiple parallel 2DEG channels to reduce the series resistance. Multi-channel AlGaN/GaN-based air-bridge structure planar SBDs with a half through-hole are demonstrated. The series resistance of quintuple-channel SBD is only 39.5% of the single-channel SBD's. Moreover, a low capacitance is obtained by the Schottky electrode with a half through-hole structure. The low series resistance and the low capacitance contribute to a 16 GHz cutoff frequency in millimeter-wave band.
引用
收藏
页数:7
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