Multi-channel AlGaN/GaN Schottky barrier diodes with a half through-hole

被引：9

作者：

Liu, Yuebo ^{[1
]}

Yao, Wanqing ^{[1
]}

Liu, Honghui ^{[1
]}

Yang, Longkun ^{[1
]}

Liu, Shangfeng ^{[3
,4
]}

Yang, Liuyun ^{[3
,4
]}

Wang, Fengge ^{[1
]}

Ren, Yuan ^{[1
]}

Shen, Junyu ^{[1
]}

Zhang, Minjie ^{[1
]}

Wu, Zhisheng ^{[1
,2
]}

Liu, Yang ^{[1
,2
]}

Wang, Qi ^{[5
]}

Wang, Xinqiang ^{[3
,4
]}

Zhang, Baijun ^{[1
,2
]}

机构：

[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China

[2] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

[3] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[4] Peking Univ, Sch Phys, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China

[5] Peking Univ, Dongguan Inst Optoelect, Dongguan 523808, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 133卷

关键词：

Multi-channel; AlGaN; GaN SBDs; 2DEG; Cutoff frequency; MILLIMETER-WAVE; GAN; FREQUENCY; MICROWAVE; CIRCUITS;

D O I：

10.1016/j.mssp.2021.105934

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The cutoff frequency of Schottky barrier diode (SBD) depends on its junction capacitance and series resistance. The two-dimensional electron gas (2DEG) at AlGaN/GaN interface has high carrier mobility and carrier concentration. However, AlGaN/GaN heterostructure SBD usually shows a high series resistance because of the thin 2DEG channel. In this work, multiple AlGaN/GaN heterojunctions are vertically stacked for forming multiple parallel 2DEG channels to reduce the series resistance. Multi-channel AlGaN/GaN-based air-bridge structure planar SBDs with a half through-hole are demonstrated. The series resistance of quintuple-channel SBD is only 39.5% of the single-channel SBD's. Moreover, a low capacitance is obtained by the Schottky electrode with a half through-hole structure. The low series resistance and the low capacitance contribute to a 16 GHz cutoff frequency in millimeter-wave band.

引用

页数：7

共 35 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[2] LOW-PARASITIC, PLANAR SCHOTTKY DIODES FOR MILLIMETER-WAVE INTEGRATED-CIRCUITS [J].

ARCHER, JW ;

BATCHELOR, RA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1990, 38 (01) :15-22

[3] Importance of the Gate-Dependent Polarization Charge on the Operation of GaN HEMTs [J].

Ashok, Ashwin ;

Vasileska, Dragica ;

Goodnick, Stephen M. ;

Hartin, Olin L. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (05) :998-1006

[4] Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking [J].

Bahat-Treidel, E. ;

Hilt, Oliver ;

Zhytnytska, Rimma ;

Wentzel, Andreas ;

Meliani, Chafik ;

Wuerfl, Joachim ;

Traenkle, Guenther .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) :357-359

[5]

Bishop W.L., 1990, INT MICR S INT MICR S

[6]

Bishop W.L., 1987, INT MICR S INT MICR S

[7] CUTOFF FREQUENCY OF SUBMILLIMETER SCHOTTKY-BARRIER DIODES [J].

CHAMPLIN, KS ;

EISENSTEIN, G .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (01) :31-34

[8] GaAs devices and circuits for terahertz applications [J].

Crowe, TW ;

Hesler, JL ;

Weikle, RM ;

Jones, SH .

INFRARED PHYSICS & TECHNOLOGY, 1999, 40 (03) :175-189

[9] MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications [J].

Cywinski, Grzegorz ;

Szkudlarek, Krzesimir ;

Kruszewski, Piotr ;

Yahniuk, Ivan ;

Yatsunenko, Sergey ;

Muziol, Grzegorz ;

Siekacz, Marcin ;

Skierbiszewski, Czeslaw ;

Rumyantsev, Sergey ;

Knap, Wojciech .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (02)

[10] Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors [J].

Erine, Catherine ;

Ma, Jun ;

Santoruvo, Giovanni ;

Matioli, Elison .

IEEE ELECTRON DEVICE LETTERS, 2020, 41 (03) :321-324

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