Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride

被引：6

作者：

Zakheim, Dmitry A. ^{[1
]}

Lundin, Wsevolod, V ^{[1
,2
]}

Sakharov, Alexey, V ^{[1
]}

Zavarin, Eugene E. ^{[1
]}

Brunkov, Pavel N. ^{[1
,2
]}

Lundina, Elena Y. ^{[1
]}

Tsatsulnikov, Andrey F. ^{[2
,3
]}

Karpov, Sergey Yu ^{[4
]}

机构：

[1] Ioffe Inst, 26 Polytekhnicheskaya Str, St Petersburg 194021, Russia

[2] St Petersburg Natl Res Univ Informat Technol Mech, 49 Kronverskyi Ave, St Petersburg 197101, Russia

[3] RAS, Submicron Heterostruct Microelect, Res & Engn Ctr, 26 Politekhnicheskaya Str, St Petersburg 194021, Russia

[4] Soft Impact Ltd, STR Grp, 64 Bolshoi Sampsonievskii Ave,Bld E, St Petersburg 194044, Russia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2018年 / 33卷 / 11期

关键词：

MIS Schottky diodes; silicon nitride; leakage current; point defects; deposition conditions; GaN; CHARGE-TRAPPING PROPERTIES; STORAGE LAYERS; N-GAN; EXPLANATION; PASSIVATION; TRANSPORT; HYDROGEN; DEFECTS; DEVICES; MEMORY;

D O I：

10.1088/1361-6641/aae242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-insulator-semiconductor (MIS) GaN-based Schottky diodes with an ultra-thin in situ deposited Si3N4 dielectric are fabricated and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The leakage current of the reverse biased diodes is found to depend strongly on Si3N4 deposition temperature, with an activation energy of 7.3 eV, and reactor atmosphere (N-2 versus H-2). The dependence is attributed to point defects originating from the deviation of Si3N4 from stoichiometric composition. Deposition of Si3N4 at low temperatures is shown to substantially suppress the leakage current. The effective barrier heights in the MIS Schottky diodes are also affected by Si3N4 deposition conditions and, in particular, by the deposition temperature.

引用

页数：8

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