Effect of various material parameters on the calculated velocity-field relation in Al0.2Ga0.8N at room temperature

The results of an ensemble Monte Carlo simulation of the steady-state electron drift velocity as a function of applied electric field in Al(0.2)Ga(0.8)N are presented. The effect of various material parameters on the calculated velocity is assessed by varying each parameter independently by +/- 30%. It is found that both the optical phonon energy and intervalley separation energy alter the peak electron velocity. Variations in the dielectric constants and central valley effective mass have more effect upon the peak drift velocity and act to alter the threshold electric field. The combined effects of a greater central valley effective mass and a larger phonon energy in Al(0.2)Ga(0.8)N result in a greater threshold field.