TAILORING THE STRUCTURAL AND OPTICAL PROPERTIES OF CdZnS THIN FILMS BY VACUUM ANNEALING

被引：0

作者：

Bakhsh, A. ^{[1
]}

Gul, I. H. ^{[1
]}

Maqsood, A. ^{[2
]}

Chan, C. H. ^{[3
]}

Wu, S. H. ^{[3
]}

Chang, Y. C. ^{[3
]}

机构：

[1] Natl Univ Sci & Technol, Sch Chem & Mat Engn, Dept Mat Engn, Islamabad 44000, Pakistan

[2] Air Univ, Nanoscale Phys Lab, Islamabad 44000, Pakistan

[3] Acad Sinica, RCAS, Taipei 11529, Taiwan

来源：

CHALCOGENIDE LETTERS | 2016年 / 13卷 / 10期

关键词：

Cadmium Zinc Sulfide; Vacuum Annealing; Phonon; Photoluminescence; Optical Properties;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effect of vacuum annealing on structural and optical properties of CdZnS thin films is reported. Nano-crystalline CdZnS films have been deposited through sublimation technique and subsequently vacuum annealed at 300 degrees C and 400 degrees C for two hours. The samples have been characterized through X-ray diffraction, Scanning Electron Microscopy, Raman Scattering, UV-Visible spectroscopy and Photoluminescence. New diffraction peaks along (002) and (103) planes have been observed after vacuum annealing the polycrystalline thin films. Sample annealed at 400 degrees C revealed that large grains were made up of uniformly distributed tinier grains. Raman spectroscopy confirmed the existence of ZnS along with CdZnS and a decrease in substitution disorder due to Zn diffusion in the crystal structure with vacuum annealing. The band gap energy increased from 2.56 eV to 2.70 eV with a decrease in CdS enriched phase. Photoluminescence peaks exhibited a blue shift and Stoke's shift energy increased from 160 meV to 230 meV as a result of the vacuum annealing process.

引用

页码：443 / 450

页数：8

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