Ultrahigh-density nanotransistors by using selectively grown vertical carbon nanotubes

A type of carbon nanotube transistors, which would be suitable for large-scale integration, has been fabricated from vertically aligned carbon nanotubes. We fabricated highly ordered carbon nanotubes, which are selectively grown on the patterned aluminum oxide nanotemplates. Each device element is formed on a vertical carbon nanotube attached to a bottom (source) and upper (drain) electrodes and a gate electrode, which is electrostatically switchable. The transistors can be integrated in large arrays with the potential for tera-level density (2x10(11)/cm(2)). The vertical carbon nanotube transistor shows ON/OFF switching operation at 30 K. (C) 2001 American Institute of Physics.