Bilayer Metal-Oxide Conductive Bridge Memory Technology for Improved Window Margin and Reliability

被引：14

作者：

Barci, Marinela ^{[1
]}

Molas, Gabriel ^{[1
]}

Cagli, Carlo ^{[1
]}

Vianello, Elisa ^{[1
]}

Bernard, Mathieu ^{[1
]}

Roule, Anne ^{[1
]}

Toffoli, Alain ^{[1
]}

Cluzel, Jacques ^{[1
]}

De Salvo, Barbara ^{[1
]}

Perniola, Luca ^{[1
]}

机构：

[1] Commissariat Energie Atom, Lab Elect & Technol Informat, Minatec Campus, F-38054 Grenoble, France

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2016年 / 4卷 / 05期

关键词：

CBRAM; ReRAM; NV memory; metal-oxide; bilayer; endurance; data retention; HRS drift; TAT tunneling model; smart reset; DEVICES;

D O I：

10.1109/JEDS.2016.2567219

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a detailed reliability analysis of metal-oxide conductive bridge memories (CBRAM) is presented. This paper mostly focuses on electrical characterization of metal-oxide CBRAM devices endurance, using optimized program/erase conditions, and data retention at high temperature. The addition of a thin metal-oxide layer (0.5 nm-thick Al2O3) in the bottom of the GdOX memory stack significantly increases the ROFF and the memory window (more than one decade), with improved endurance performance (up to 105 cycles) with respect to the monolayer CBRAM device. Meanwhile, high thermal stability was also achieved (two decades of window margin are constantly maintained beyond 24 h at 250 degrees C). The bilayer oxide GdOX/Al2O3 CBRAM is a promising technology for potential future high density memory applications.

引用

页码：314 / 320

页数：7

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