Dephasing of coherent LO phonon-plasmon coupled modes in polar semiconductors

被引：0

作者：

Katayama, S ^{[1
]}

Hase, M ^{[1
]}

Iida, M ^{[1
]}

Nakashima, S ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Tatsunokuchi 9231292, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a simple theoretical analysis of the observed dephasing time for the coherent coupled LO phonon-plasmon modes in n-type GaAs. The variation in the behavior of the upper (L+)and lower(L-) branch with photoexcited carrier density is interpreted in terms of interchange between the roles of the plasmon and phonon decays.

引用

页码：180 / 181

页数：2

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