Trap-Assisted Recombination in Disordered Organic Semiconductors

被引：273

作者：

Kuik, M. ^{[1
]}

Koster, L. J. A. ^{[1
]}

Wetzelaer, G. A. H. ^{[1
]}

Blom, P. W. M. ^{[1
,2
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Holst Ctr, NL-5656 AE Eindhoven, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 107卷 / 25期

关键词：

LIGHT-EMITTING-DIODES; SOLAR-CELLS; ELECTRON;

D O I：

10.1103/PhysRevLett.107.256805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The trap-assisted recombination of electrons and holes in organic semiconductors is investigated. The extracted capture coefficients of the trap-assisted recombination process are thermally activated with an identical activation energy as measured for the hole mobility mu(p). We demonstrate that the rate limiting step for this mechanism is the diffusion of free holes towards trapped electrons in their mutual Coulomb field, with the capture coefficient given by (q/epsilon)mu(p). As a result, both the bimolecular and trap-assisted recombination processes in organic semiconductors are governed by the charge carrier mobilities, allowing predictive modeling of organic light-emitting diodes.

引用

页数：5

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