Scanning tunneling microscopy study of higher-order Si(100)-c(8 x 8) surface reconstruction

被引：2
|
作者：
Zilani, M. A. K. [1 ,2 ]
Xu, H. [1 ]
Wang, X-S [1 ]
Yakovlev, Nikolai [3 ]
Wee, A. T. S. [1 ]
机构：
[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[2] Rajshahi Univ Engn & Technol, Dept Phys, Rajshahi 6204, Bangladesh
[3] Inst Mat Res & Engn, Singapore 117602, Singapore
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2008年 / 20卷 / 39期
关键词：
D O I：
10.1088/0953-8984/20/39/395003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have studied the higher-order Si(100)-c(8 x 8) surface reconstruction using scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Our high resolution STM images show that long range ordering of rectangular cells are the building blocks of this reconstruction. We identify Si-Si ad-dimers and determine that three pairs of ad-dimers constitute each rectangular cell. The ad-dimer direction is parallel to the longer side of these rectangular cells. We propose a new dimer model to explain this reconstruction.
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页数：6
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