Acceptor activation of Mg-doped GaN by microwave treatment

被引：0

作者：

Tsai, TL ^{[1
]}

Chang, CY ^{[1
]}

Chiang, CL ^{[1
]}

Chang, CS ^{[1
]}

Jong, CS ^{[1
]}

Chen, TP ^{[1
]}

Huang, KH ^{[1
]}

机构：

[1] United Epitaxy Co, Dept Res & Dev, Hsinchu 300, Taiwan

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

p-type GaN; microwave treatment; Hall measurement; PL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A microwave treatment method different from thermal annealing (TA) and low energy electron beam irradiation (LEEBI) was proposed to activate the dopants in p-type GaN epitaxial layer. From photoluminescence (PL) spectra and Hall effect measurement, microwave treatment (MWT) is a very effective way to activate the acceptors in Mg doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to microwave energy absorption.

引用

页码：744 / 745

页数：2

共 6 条

[1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[2] ELECTRON-BEAM EFFECTS ON BLUE LUMINESCENCE OF ZINC-DOPED GAN [J].

AMANO, H ;

AKASAKI, I ;

KOZAWA, T ;

HIRAMATSU, K ;

SAWAKI, N ;

IKEDA, K ;

ISHII, Y .

JOURNAL OF LUMINESCENCE, 1988, 40-1 :121-122

[3]

GOTZ W, 1995, APPL PHYS LETT, V67, P2666, DOI 10.1063/1.114330

[4] THERMAL ANNEALING EFFECTS ON P-TYPE MG-DOPED GAN FILMS [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M ;

IWASA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (2B) :L139-L142

[5] HOLE COMPENSATION MECHANISM OF P-TYPE GAN FILMS [J].

NAKAMURA, S ;

IWASA, N ;

SENOH, M ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A) :1258-1266

[6]

Nakamura S., 1994, Patent, Patent No. 5306662

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