Optimum treatment for improvement of indium-halo structure for sub-0.1 μm n-type metal-oxide-semiconductor field-effect transistor

The effect of post-thermal annealing after indium-halo implantation on the characteristics and reliability of sub-0.1 mum n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) was studied for the first time. We found that the control of annealing time is more efficient than that of annealing temperature with respect to achieving junction and gate oxide integrities. The best results of device performance were obtained with post-annealing treatment performed at medium temperatures (e.g., 900 degreesC) for a longer time.