The pure and Er3+-doped (0.5, 1.0, 2.0 and 5.0 mol.%) PMN-0.25PT transparent ceramics were fabricated. The phase formations were investigated by X-ray diffraction patterns. The optical transmittance and absorption spectra were measured. The Er3+-doping in the region of 0.5-2.0 mol.% can enhance the optical transmittance of Er3+-doped PMN-0.25PT transparent ceramics. The Er3+ doping can modify the optical absorption near the band gap energy of PMN-0.25PT. The shift of the absorption edge to higher energy was observed in the case of the low doping concentration (<2.0 mol.%) and the red-shift was found for the higher doping concentration (5.0 mol.%). This has been explained by the combined effects of ion polarization and localized defect energy level. The direct energy gaps, the indirect energy gaps and phonon energy contributing in the indirect transition were determined based on the theory of band to band transitions. (C) 2012 Elsevier Ltd and Techna Group Sri. All rights reserved.
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Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect & Opt Valley Lab, Sch Integrated Circuits, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect & Opt Valley Lab, Sch Integrated Circuits, Wuhan 430074, Peoples R China
Hu, Ming
Chang, Zhongcan
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Natl Engn Res Ctr Next Generat Internet Access Sy, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect & Opt Valley Lab, Sch Integrated Circuits, Wuhan 430074, Peoples R China
Chang, Zhongcan
Nie, Nan
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Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect & Opt Valley Lab, Sch Integrated Circuits, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect & Opt Valley Lab, Sch Integrated Circuits, Wuhan 430074, Peoples R China
Nie, Nan
Wan, Zhujun
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Natl Engn Res Ctr Next Generat Internet Access Sy, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect & Opt Valley Lab, Sch Integrated Circuits, Wuhan 430074, Peoples R China
Wan, Zhujun
Dong, Wen
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Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect & Opt Valley Lab, Sch Integrated Circuits, Wuhan 430074, Peoples R China
Huazhong Univ Sci & Technol, Res Inst, Shenzhen 518000, Peoples R ChinaHuazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect & Opt Valley Lab, Sch Integrated Circuits, Wuhan 430074, Peoples R China
Dong, Wen
Fu, Qiuyun
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Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect & Opt Valley Lab, Sch Integrated Circuits, Wuhan 430074, Peoples R China
Huazhong Univ Sci & Technol, Res Inst, Shenzhen 518000, Peoples R ChinaHuazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect & Opt Valley Lab, Sch Integrated Circuits, Wuhan 430074, Peoples R China
机构:
Chiang Mai Univ, Dept Phys, Fac Sci, Chiang Mai 50200, Thailand
Penn State Univ, Mat Res Lab, University Pk, PA 16802 USAChiang Mai Univ, Dept Phys, Fac Sci, Chiang Mai 50200, Thailand
Wongmaneerung, Rewadee
Guo, Ruyan
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Penn State Univ, Mat Res Lab, University Pk, PA 16802 USAChiang Mai Univ, Dept Phys, Fac Sci, Chiang Mai 50200, Thailand
Guo, Ruyan
Bhalla, Amar
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Penn State Univ, Mat Res Lab, University Pk, PA 16802 USAChiang Mai Univ, Dept Phys, Fac Sci, Chiang Mai 50200, Thailand
Bhalla, Amar
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Yimnirun, Rattikorn
Ananta, Supon
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Chiang Mai Univ, Dept Phys, Fac Sci, Chiang Mai 50200, ThailandChiang Mai Univ, Dept Phys, Fac Sci, Chiang Mai 50200, Thailand