STUDY ON RESONANT FREQUENCY AND IMPEDANCE PROPERTIES OF FILM BULK ACOUSTIC RESONATOR

被引：0
|
作者：
Zhang, Wen-Liang [1 ]
Huang, De-Jin [1 ]
Luo, Xin-Yi [1 ]
Wang, Ji [1 ]
机构：
[1] Ningbo Univ, Sch Mech Engn & Mech, Ningbo 315211, Zhejiang, Peoples R China
来源：
2013 SYMPOSIUM ON PIEZOELECTRICITY, ACOUSTIC WAVES AND DEVICE APPLICATIONS (SPAWDA) | 2013年
关键词：
FBAR; SMR; frequency; impedance; Bragg reflector;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on the fundamental piezoelastic theory, the vibration equation of layered FBAR under sine excitation voltage was derived. The unknown constants were calculated with boundary and continuity conditions. The expressions of electrical impedance were obtained from the electrical potential and current. The series and parallel resonance frequency are then calculated when the electrical impedance tends to infinite and zero. The bandwidth and effective electromechanical coupling factor are calculated from the series and parallel resonance frequency. The Bragg reflection layers will reduce the loss of mechanical energy.
引用
收藏
页码：220 / 222
页数：3
相关论文
共 50 条
  • [31] Flexible structured high-frequency film bulk acoustic resonator for flexible wireless electronics
    Zhou, Changjian
    Shu, Yi
    Yang, Yi
    Jin, Hao
    Dong, Shu-Rong
    Chan, Mansun
    Ren, Tian-Ling
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2015, 25 (05)
  • [32] Fabrication and characterization of ZnO-based film bulk acoustic resonator with a high working frequency
    Zhang, T
    Wang, Y
    Liu, WL
    Cheng, JG
    Song, ZT
    Feng, SL
    Chan-Wong, LWH
    Choy, CL
    CHINESE PHYSICS LETTERS, 2005, 22 (03) : 694 - 696
  • [33] Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering
    Kan LI
    Journal of Zhejiang University(Science A:An International Applied Physics & Engineering Journal), 2009, (03) : 464 - 470
  • [34] Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering
    Kan Li
    Hao Jin
    De-miao Wang
    Yi-fei Tang
    Journal of Zhejiang University-SCIENCE A, 2009, 10 : 464 - 470
  • [35] Single-mode high frequency LiNbO3 Film Bulk Acoustic Resonator
    Bousquet, Marie
    Bertucchi, Michael
    Perreau, Pierre
    Castellan, Gael
    Maeder-Pachurka, Catherine
    Mercier, Denis
    Delprato, Julien
    Borzi, Aurelio
    Sejil, Selsabil
    Enyedi, Gregory
    Dechamp, Jerome
    Zussy, Marc
    Kuisseu, Pauline Sylvia Pokam
    Mazen, Frederic
    Billard, Christophe
    Reinhardt, Alexandre
    2019 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS), 2019, : 84 - 87
  • [36] Preparation of AlN thin films for film bulk acoustic resonator application by radio frequency sputtering
    Li, Kan
    Jin, Hao
    Wang, De-miao
    Tang, Yi-fei
    JOURNAL OF ZHEJIANG UNIVERSITY-SCIENCE A, 2009, 10 (03): : 464 - 470
  • [37] Second-order resonant ZnO-based film bulk acoustic resonator devices and thermal techniques to improve their resonant characteristics
    Mai, Linh
    Pham, Van-Su
    Yoon, Giwan
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (01): : 67 - 72
  • [38] Impedance-matched high-overtone bulk acoustic resonator
    Kurosu, M.
    Hatanaka, D.
    Ohta, R.
    Yamaguchi, H.
    Taniyasu, Y.
    Okamoto, H.
    APPLIED PHYSICS LETTERS, 2023, 122 (12)
  • [39] Micro-accelerometer with film bulk acoustic resonator on diaphragm
    Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang
    621999, China
    不详
    621010, China
    不详
    400044, China
    不详
    400044, China
    Zhongguo Guanxing Jishu Xuebao, 2 (262-269):
  • [40] Simulation and fabrication of thin film bulk acoustic wave resonator
    韩茜茜
    欧毅
    李志刚
    欧文
    陈大鹏
    叶甜春
    Journal of Semiconductors, 2016, (07) : 90 - 95
12345