Atomistic simulation of grain boundary sliding and migration

被引:79
作者
Chandra, N [1 ]
Dang, P [1 ]
机构
[1] Florida State Univ, Florida A&M Univ, Coll Engn, Dept Mech Engn, Tallahassee, FL 32310 USA
关键词
D O I
10.1023/A:1004531706998
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Interatomic potentials using Embedded Atom Method (EAM) are used in conjunction with molecular statics and dynamics calculations to study the sliding and migration of [1 1 0] symmetric tilt grain boundaries (STGB) in aluminum, under both applied displacement and force conditions. For equilibrium grain boundaries (without applied displacements and forces), three low energy configurations (corresponding to three twin structures) are found in the [1 1 0] STGB structures when grain boundary energies at 0 K are computed as a function of grain misorientation angle. "Pure" grain boundary sliding (GBS) without migration is simulated by applying external displacement. When forces are applied, the energy barriers are reduced consequent to the fact that grain boundary sliding of STGB is always coupled with migration. The propensity for "pure" GBS is evaluated by computing the energy associated with incremental equilibrium configurations during the sliding process and compared to the case when sliding is accompanied by migration. The magnitude of the energy barriers is found to be much higher in "pure" GBS than when migration accompanies sliding. Relations between the applied force, internal stress field, and displacement field are established and the role of grain boundary structure on the deformation process are examined. It is found that the GBS displacement is proportional to applied force, GB energy, and time. (C) 1999 Kluwer Academic Publishers.
引用
收藏
页码:655 / 666
页数:12
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