Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology

被引：1

作者：

Yin, Haizhou ^{[1
]}

Hamaguchi, M. ^{[3
]}

Saenger, K. L.

Sung, C. Y. ^{[2
]}

Hasumi, R. ^{[3
]}

Ohuchi, K. ^{[3
]}

Zhang, R. ^{[1
,2
]}

Cai, J.

Ott, J. A. ^{[2
]}

Chen, X. ^{[1
]}

Luo, Z. J. ^{[1
]}

Rovedo, N. ^{[1
]}

Fogel, K. ^{[2
]}

Pfeiffer, G. ^{[1
]}

Kleinhenz, R. ^{[1
]}

Sadana, D. K. ^{[2
]}

Takayanagi, M. ^{[3
]}

Ishimaru, K. ^{[3
]}

Ning, T. H.

Park, D. -G. ^{[2
]}

Shahidi, G. ^{[2
]}

机构：

[1] IBM Semicond Res & Dev Ctr, Syst & Technol Grp, Hopewell Jct, NY 12533 USA

[2] TJ Watson Res Ctr, Div Res, Yorktown Hts, NY 10598 USA

[3] Toshiba Amer Elect Components Inc, Yorktown Hts, NY 10598 USA

来源：

2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM | 2008年

关键词：

D O I：

10.1109/VTSA.2008.4530786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

End-of-range (EOR) defects generated during the crystal orientation conversion process in DSB technology can give rise to various types of junction leakage depending on their locations relative to device structures. A wide range of EOR defect depths are investigated. Shallow-implant-induced EOR defects (similar to 100nm) are found to minimize junction leakages due to EOR defects being outside of junction depletion regions. These implant conditions produce no adverse impact on source/drain channel leakage, suggesting that the crystal conversion process is optimized by shallow implants.

引用

页码：34 / +

页数：2

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