Effect of graphene grain boundaries on MoS2/graphene heterostructures

被引:4
作者
Zhang, Yue [1 ]
Zhang, Xiangzhe [2 ]
Deng, Chuyun [2 ]
Ge, Qi [3 ]
Huang, Junjie [1 ]
Lu, Jie [1 ]
Lin, Gaoxiang [1 ]
Weng, Zekai [1 ]
Zhang, Xueao [1 ,3 ]
Cai, Weiwei [1 ,3 ]
机构
[1] Xiamen Univ, Coll Phys Sci & Technol, Xiamen 361005, Peoples R China
[2] Natl Univ Def Technol, Coll Arts & Sci, Changsha 410073, Peoples R China
[3] Chongqing 2D Mat Inst, Chongqing 400714, Peoples R China
基金
中国国家自然科学基金;
关键词
photoresponse; heterostructures; grain-boundary; MOS2; QUALITY; GROWTH;
D O I
10.1088/1674-1056/ab8a37
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The grain boundaries of graphene are disordered topological defects, which would strongly affect the physical and chemical properties of graphene. In this paper, the spectral characteristics and photoresponse of MoS2/graphene heterostructures are studied. It is found that the blueshift of the G and 2D peaks of graphene in Raman spectrum is due to doping. The lattice mismatch at the graphene boundaries results in a blueshift of MoS(2)features in the photoluminescence spectra, comparing to the MoS(2)grown on SiO2. In addition, the photocurrent signal in MoS2/hexagonal single-crystal graphene heterostructures is successfully captured without bias, but not in MoS2/polycrystalline graphene heterostructures. The electron scattering at graphene grain boundaries affects the optical response of MoS2/graphene heterostructures. The photoresponse of the device is attributed to the optical absorption and response of MoS(2)and the high carrier mobility of graphene. These findings offer a new approach to develop optoelectronic devices based on two-dimensional material heterostructures.
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页数:5
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