Cooperative Effect of GO and Glucose on PEDOT:PSS for High VOC and Hysteresis-Free Solution-Processed Perovskite Solar Cells

被引:62
|
作者
Giuri, Antonella [1 ]
Masi, Sofi A. [2 ,3 ,4 ]
Colella, Silvia [2 ,4 ]
Kovtun, Alessandro [5 ]
Dell'Elce, Simone [5 ]
Treossi, Emanuele [5 ]
Liscio, Andrea [5 ]
Corcione, Carola Esposito [1 ]
Rizzo, Aurora [4 ]
Listorti, Andrea [2 ,4 ]
机构
[1] Univ Salento, Dipartimento Ingn Innovaz, Via Monteroni,Km 1, I-73100 Lecce, Italy
[2] Univ Salento, Dipartimento Matemat & Fis E De Giorgi, Via Arnesano SNC, I-73100 Lecce, Italy
[3] Ist Italiano Tecnol, Ctr Biomol Nanotechnol CBN Fdn, Via Barsanti 14, I-73010 Lecce, Italy
[4] CNR Nanotec, Ist Nanotecnol, Polo Nanotecnol, Campus Ecotekne,Via Monteroni, I-73100 Lecce, Italy
[5] CNR ISOF, Ist Sintesi & Fotoreattivita, Via Gobetti 101, I-40129 Bologna, Italy
关键词
REDUCED GRAPHENE OXIDE; LOW-TEMPERATURE; GRAPHITE OXIDE; PERFORMANCE; REDUCTION; LAYER; LIGHT; FLEXIBILITY; EFFICIENCY; EVOLUTION;
D O I
10.1002/adfm.201603023
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Hybrid organic-inorganic halide perovskites have emerged at the forefront of solution-processable photovoltaic devices. Being the perovskite precursor mixture a complex equilibrium of species, it is very difficult to predict/control their interactions with different substrates, thus the final film properties and device performances. Here the wettability of CH3NH3PbI3 (MAPbI(3)) onto poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) hole transporting layer is improved by exploiting the cooperative effect of graphene oxide (GO) and glucose inclusion. The glucose, in addition, triggers the reduction of GO, enhancing the conductivity of the PEDOT:PSS+GO+glucose based nanocomposite. The relevance of this approach toward photovoltaic applications is demonstrated by fabricating a hysteresis-free MAPbI(3) solar cells displaying a approximate to 37% improvement in power conversion efficiency if compared to a device grown onto pristine PEDOT:PSS. Most importantly, V-OC reaches values over 1.05 V that are among the highest ever reported for PEDOT:PSS p-i-n device architecture, suggesting minimal recombination losses, high hole-selectivity, and reduced trap density at the PEDOT:PSS along with optimized MAPbI(3) coverage.
引用
收藏
页码:6985 / 6994
页数:10
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