A critical review on the carrier dynamics in 2D layered materials investigated using THz spectroscopy

被引:23
|
作者
Lu Junpeng [1 ]
Liu Hongwei [2 ]
机构
[1] Southeast Univ, Sch Phys, Nanjing 211189, Jiangsu, Peoples R China
[2] Nanjing Normal Univ, Sch Phys & Technol, Nanjing 210023, Jiangsu, Peoples R China
关键词
2D materials; THz; Graphene; TMDs; Carrier dynamics; BAND TERAHERTZ SPECTROSCOPY; TIME-DOMAIN SPECTROSCOPY; MONO LAYER; PHOTOEXCITED CARRIERS; ELECTRONIC TRANSPORT; CDSXSE1-X NANOBELTS; PUMP-PROBE; GRAPHENE; CONDUCTIVITY; MOS2;
D O I
10.1016/j.optcom.2017.06.069
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Accurately illustrating the photocarrier dynamics and photoelectrical properties of two dimensional (2D) materials is crucial in the development of 2D material-based optoelectronic devices. Considering this requirement, terahertz (THz) spectroscopy has emerged as a befitting characterization tool to provide deep insights into the carrier dynamics and measurements of the electrical/photoelectrical conductivity of 2D materials. THz spectroscopic measurements would provide information of transient behaviors of carriers with high accuracy in a nondestructive and noncontact manner. In this article, we present a comprehensive review on recent research efforts on investigations of 2D materials of graphene and transition metal dichalcogenides (TMDs) using THz spectroscopy. A brief introduction of THz time-domain spectroscopy (THz-TDS) and optical pump-THz probe spectroscopy (OPTP) is provided. The characterization of the electron transport of graphene at equilibrium state and transient behavior at non-equilibrium state is reviewed. We also review the characterizations of TMDs including MoS2 and WSe2. Finally, we conclude the recent reports and give a prospect on how THz characterizations would guide the design and optimization of 2D material-based optoelectronic devices. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:24 / 35
页数:12
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