Layer-by-layer epitaxial growth of Mg on GaN(0001)

被引：6

作者：

Pezzagna, S. ^{[1
]}

Vezian, S. ^{[1
]}

Brault, J. ^{[1
]}

Massies, J. ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 23期

关键词：

D O I：

10.1063/1.2943323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that Mg deposition at room temperature on a GaN(0001) surface, obtained in situ by molecular beam epitaxy, gives rise to a layer-by-layer epitaxial growth mode. The study by reflection high-energy electron diffraction and scanning tunneling microscopy clearly evidences that a two-dimensional nucleation growth mechanism occurs from the very first Mg monolayer deposited. A complete covering of the GaN surface is obtained from the deposition of the first two monolayers of Mg. (c) 2008 American Institute of Physics.

引用

页数：3

共 26 条

[1] STRUCTURE AND GROWTH OF CRYSTALLINE SUPERLATTICES - FROM MONOLAYER TO SUPERLATTICE [J].

BAUER, E ;

VANDERMERWE, JH .

PHYSICAL REVIEW B, 1986, 33 (06) :3657-3671

[2] Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy [J].

Beaumont, B ;

Haffouz, S ;

Gibart, P .

APPLIED PHYSICS LETTERS, 1998, 72 (08) :921-923

[3] Study of the growth of thin Mg films on wurtzite GaN surfaces [J].

Bermudez, VM .

SURFACE SCIENCE, 1998, 417 (01) :30-40

[4] The growth and properties of Al and AlN films on GaN(0001)-(1x1) [J].

Bermudez, VM ;

Jung, TM ;

Doverspike, K ;

Wickenden, AE .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) :110-119

[5] GROWTH OF THIN NI FILMS ON GAN(0001)-(1X1) [J].

BERMUDEZ, VM ;

KAPLAN, R ;

KHAN, MA ;

KUZNIA, JN .

PHYSICAL REVIEW B, 1993, 48 (04) :2436-2444

[6] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J].

CHO, AY ;

DERNIER, PD .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3328-3332

[7] ANOMALOUS INTERPLANAR EXPANSION AT THE (0001) SURFACE OF BE [J].

DAVIS, HL ;

HANNON, JB ;

RAY, KB ;

PLUMMER, EW .

PHYSICAL REVIEW LETTERS, 1992, 68 (17) :2632-2635

[8] An ohmic nanocontact to GaAs [J].

Lee, TH ;

Liu, J ;

Janes, DB ;

Kolagunta, VR ;

Dicke, J ;

Andres, RP ;

Lauterbach, J ;

Melloch, MR ;

McInturff, D ;

Woodall, JM ;

Reifenberger, R .

APPLIED PHYSICS LETTERS, 1999, 74 (19) :2869-2871

[9] Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions [J].

Liu, QZ ;

Lau, SS ;

Perkins, NR ;

Kuech, TF .

APPLIED PHYSICS LETTERS, 1996, 69 (12) :1722-1724

[10] Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy [J].

Liu, QZ ;

Shen, L ;

Smith, KV ;

Tu, CW ;

Yu, ET ;

Lau, SS ;

Perkins, NR ;

Kuech, TF .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :990-992

← 1 2 3 →