Layer-by-layer epitaxial growth of Mg on GaN(0001)

被引：6

作者：

Pezzagna, S. ^{[1
]}

Vezian, S. ^{[1
]}

Brault, J. ^{[1
]}

Massies, J. ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 23期

关键词：

D O I：

10.1063/1.2943323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that Mg deposition at room temperature on a GaN(0001) surface, obtained in situ by molecular beam epitaxy, gives rise to a layer-by-layer epitaxial growth mode. The study by reflection high-energy electron diffraction and scanning tunneling microscopy clearly evidences that a two-dimensional nucleation growth mechanism occurs from the very first Mg monolayer deposited. A complete covering of the GaN surface is obtained from the deposition of the first two monolayers of Mg. (c) 2008 American Institute of Physics.

引用

页数：3

共 50 条

[1] Layer-by-layer growth of Ag on a GaN(0001) surface
Wu, KH
Xue, QZ
Bakhtizin, RZ
Fujikawa, Y
Li, X
Nagao, T
Xue, QK
Sakurai, T
APPLIED PHYSICS LETTERS, 2003, 82 (09) : 1389 - 1391
[2] LAYER-BY-LAYER EPITAXIAL-GROWTH OF GAN AT LOW-TEMPERATURES
SUMAKERIS, J
SITAR, Z
AILEYTRENT, KS
MORE, KL
DAVIS, RF
THIN SOLID FILMS, 1993, 225 (1-2) : 244 - 249
[3] Rate equations for layer-by-layer epitaxial growth
Trofimov, VI
Medvedev, BK
Mokerov, VG
Shumyankov, AG
DOKLADY AKADEMII NAUK, 1996, 347 (04) : 469 - 471
[4] Layer-by-layer growth of GaN induced by silicon
Munkholm, A
Thompson, C
Murty, MVR
Eastman, JA
Auciello, O
Stephenson, GB
Fini, P
DenBaars, SP
Speck, JS
APPLIED PHYSICS LETTERS, 2000, 77 (11) : 1626 - 1628
[5] Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces
Tanaka, Satoru
Morita, Kouhei
Hibino, Hiroki
PHYSICAL REVIEW B, 2010, 81 (04):
[6] Layer-by-layer growth of AIN on ZnO(0001) substrates at room temperature
Ueno, Kohei
Kobayashi, Atsushi
Ohta, Jitsuo
Fujioka, Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (42-45): : L1139 - L1141
[7] Dynamic observation of layer-by-layer growth and removal of graphene on Ru(0001)
Cui, Yi
Fu, Qiang
Bao, Xinhe
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2010, 12 (19) : 5053 - 5057
[8] Layer-by-layer growth of AlN on ZnO(0001) substrates at room temperature
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8508, Japan
不详
Jpn J Appl Phys Part 2 Letter, 42-45 (L1139-L1141):
[9] Layer-by-layer growth of AlN and GaN by molecular beam epitaxy
Daudin, B
Widmann, F
JOURNAL OF CRYSTAL GROWTH, 1997, 182 (1-2) : 1 - 5
[10] Layer-by-layer growth of AlN and GaN by molecular beam epitaxy
SP2M/PSC, CEA Grenoble, Grenoble, France
J Cryst Growth, 1-2 (1-5):

← 1 2 3 4 5 →