Critical role of CuO doping on energy storage performance and electromechanical properties of Ba0.8Sr0.1Ca0.1Ti0.9Zr0.1O3 ceramics

CuO doped Ba0.8Sr0.1Ca0.1Ti0.95Zr0.5O3 (BSCTZ) ceramics were prepared by a modified mechano-chemical activation technique with the aim of improving energy storage properties for ceramic capacitor applications. CuO can effectively improve the microstructural characteristics along with a transformation of BSCTZ from classical ferroelectric to relaxor, which is the prime requirement for obtaining high discharge energy density and energy efficiency. The effect of CuO doping on the microstructural, ferroelectric, dielectric, and piezoelectric properties have been systematically studied. The study reveals that an appropriate amount of CuO doping can significantly enhance the morphological properties along with improvement in material density, which is very beneficial in a material for attaining improved energy storage performance. The BSCTZ sample with 3 mol% CuO doping has shown a highly dense microstructure, high saturation polarization (33.01 mu C/cm(2)), low remnant polarization (6.74 mu C/cm(2)), ultrahigh discharge energy density (1.81 J/cm(3)) and high energy efficiency (81.9%). The CuO doping in BSCTZ has also led to a slight improvement in breakdown strength and electromechanical properties compared to pure BSCTZ ceramics, which is mainly attributed to excellent density and optimum grain size of the material.