Shot noise in ballistic graphene

被引：183

作者：

Danneau, R. ^{[1
]}

Wu, F. ^{[1
]}

Craciun, M. F. ^{[2
]}

Russo, S. ^{[2
]}

Tomi, M. Y. ^{[1
]}

Salmilehto, J. ^{[1
]}

Morpurgo, A. F. ^{[2
]}

Hakonen, P. J. ^{[1
]}

机构：

[1] Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland

[2] Delft Univ Technol, Kavli Inst Nanosci, Delft, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.100.196802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated shot noise in graphene field effect devices in the temperature range of 4.2-30 K at low frequency (f=600-850 MHz). We find that for our graphene samples with a large width over length ratio W/L, the Fano factor F reaches a maximum F similar to 1/3 at the Dirac point and that it decreases strongly with increasing charge density. For smaller W/L, the Fano factor at Dirac point is significantly lower. Our results are in good agreement with the theory describing that transport at the Dirac point in clean graphene arises from evanescent electronic states.

引用

页数：4

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