High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires

被引：16

作者：

Jacopin, Gwenole ^{[1
]}

Rigutti, Lorenzo ^{[1
]}

Bugallo, Andres De Luna ^{[1
]}

Julien, Francois Henry ^{[1
]}

Baratto, Camilla ^{[2
]}

Comini, Elisabetta ^{[2
]}

Ferroni, Matteo ^{[2
]}

Tchernycheva, Maria ^{[1
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] Univ Brescia, CNR IDASC SENSOR Lab, Brescia, Italy

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

zinc oxide; nanowire; photoluminescence; polarization; OPTICAL-PROPERTIES; LUMINESCENCE; SEMICONDUCTORS; NANORODS; CRYSTALS; SENSORS; EXCITON; OXIDE;

D O I：

10.1186/1556-276X-6-501

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed polarization ratio is explained in terms of selection rules for excitonic transitions derived from the k.p theory for ZnO. The temperature dependence of the polarization ratio evidences a gradual activation of the X(C) excitonic transition.

引用

页码：1 / 6

页数：6

共 29 条

[11] FINE STRUCTURE IN THE OPTICAL ABSORPTION EDGE OF ANISOTROPIC CRYSTALS
HOPFIELD, JJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 97 - 107
[12] Origin of defect emission identified by polarized luminescence from aligned ZnO nanorods
Hsu, NE
Hung, WK
Chen, YF
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (08) : 4671 - 4673
[13] Growth and optical properties of single-crystal tubular ZnO whiskers
Hu, JQ
Bando, Y
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (09) : 1401 - 1403
[14] Room-temperature ultraviolet nanowire nanolasers
Huang, MH
Mao, S
Feick, H
Yan, HQ
Wu, YY
Kind, H
Weber, E
Russo, R
Yang, PD
[J]. SCIENCE, 2001, 292 (5523) : 1897 - 1899
[15] Polarization asymmetry and optical modal gain saturation via carrier-photon interaction in ZnO
Kim, Bumjin
Kim, Heedae
Park, Sungkyun
Kyhm, Kwangseuk
Cho, Chaeryong
[J]. APPLIED PHYSICS LETTERS, 2010, 97 (04)
[16] In-plane anisotropy of polarized photoluminescence in M-plane (1010) ZnO and MgZnO/ZnO multiple quantum wells
Matsui, Hiroaki
Tabata, Hitoshi
[J]. APPLIED PHYSICS LETTERS, 2009, 94 (16)
[17] Bound exciton and donor-acceptor pair recombinations in ZnO
Meyer, BK
Alves, H
Hofmann, DM
Kriegseis, W
Forster, D
Bertram, F
Christen, J
Hoffmann, A
Strassburg, M
Dworzak, M
Haboeck, U
Rodina, AV
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (02): : 231 - 260
[18] Excited state properties of donor bound excitons in ZnO
Meyer, Bruno K.
Sann, Joachim
Eisermann, Sebastian
Lautenschlaeger, Stefan
Wagner, Markus R.
Kaiser, Martin
Callsen, Gordon
Reparaz, Juan S.
Hoffmann, Axel
[J]. PHYSICAL REVIEW B, 2010, 82 (11):
[19] Anisotropic optical properties of free and bound excitons in highly strained A-plane ZnO investigated with polarized photoreflectance and photoluminescence spectroscopy
Nam, Yoon Sung
Lee, Sang Wook
Baek, K. S.
Chang, S. K.
Song, Jae-Ho
Song, Jung-Hoon
Han, Seok Kyu
Hong, Soon-Ku
Yao, Takafumi
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (20)
[20] Photoluminescence polarization properties of single GaN nanowires containing AlxGa1-xN/GaN quantum discs
Rigutti, L.
Tchernycheva, M.
Bugallo, A. De Luna
Jacopin, G.
Julien, F. H.
Furtmayr, F.
Stutzmann, M.
Eickhoff, M.
Songmuang, R.
Fortuna, F.
[J]. PHYSICAL REVIEW B, 2010, 81 (04):

← 1 2 3 →