High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires

被引：16

作者：

Jacopin, Gwenole ^{[1
]}

Rigutti, Lorenzo ^{[1
]}

Bugallo, Andres De Luna ^{[1
]}

Julien, Francois Henry ^{[1
]}

Baratto, Camilla ^{[2
]}

Comini, Elisabetta ^{[2
]}

Ferroni, Matteo ^{[2
]}

Tchernycheva, Maria ^{[1
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] Univ Brescia, CNR IDASC SENSOR Lab, Brescia, Italy

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

zinc oxide; nanowire; photoluminescence; polarization; OPTICAL-PROPERTIES; LUMINESCENCE; SEMICONDUCTORS; NANORODS; CRYSTALS; SENSORS; EXCITON; OXIDE;

D O I：

10.1186/1556-276X-6-501

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed polarization ratio is explained in terms of selection rules for excitonic transitions derived from the k.p theory for ZnO. The temperature dependence of the polarization ratio evidences a gradual activation of the X(C) excitonic transition.

引用

页码：1 / 6

页数：6

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