Annealing effects on electrical and optical properties of ZnO thin films synthesized by the electrochemical method

被引：14

作者：

Yoon, Sanghwa ^{[2
]}

Huh, Ilgoo ^{[2
]}

Lim, Jae-Hong ^{[1
]}

Yoo, Bongyoung ^{[2
]}

机构：

[1] Korea Inst Mat Sci, Mat Proc Div, Electrochem Res Grp, Changwon Si 641831, Gyeongnam, South Korea

[2] Hanyang Univ, Dept Mat Engn, Ansan 426791, Gyeonggi Do, South Korea

来源：

CURRENT APPLIED PHYSICS | 2012年 / 12卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

ZnO thin films; Annealing process; Electrochemical techniques; Electrical properties; ZINC-OXIDE FILMS; CATHODIC ELECTRODEPOSITION; HYDROGEN-PEROXIDE; SEMICONDUCTORS; DEPOSITION; OXYGEN; TEMPERATURE; MECHANISM; LAYERS;

D O I：

10.1016/j.cap.2011.11.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Microstructural and electrical properties of potentiostatically electrodeposited ZnO thin films from an aqueous bath were investigated after annealing at different temperatures in Ar and 5% H-2/Ar atmospheres. It is confirmed that the bandgap energy of ZnO thin films decreased with annealing from 3.42 to 3.27-3.29 eV by calculating the wavelength of the absorption region. The annealing at temperatures as low as 200 degrees C decreased the sheet resistance of ZnO thin films because of the extinction of Zn(OH)(2) in the atmosphere. In addition, the sheet resistance of ZnO thin films decreased by annealing in a 5% H-2 atmosphere, which caused an increase of carrier concentration by hydrogen reduction. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：784 / 788

页数：5

共 27 条

[1] Diffusion and thermal stability of hydrogen in ZnO [J].

Bang, Junhyeok ;

Chang, K. J. .

APPLIED PHYSICS LETTERS, 2008, 92 (13)

[2] Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering [J].

Chen, LY ;

Chen, WH ;

Wang, JJ ;

Hong, FCN ;

Su, YK .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5628-5630

[3] Oxygen reduction reaction on electrodeposited zinc oxide electrodes in KC1 solution at 70°C [J].

Goux, A ;

Pauporté, T ;

Lincot, D .

ELECTROCHIMICA ACTA, 2006, 51 (15) :3168-3172

[4] Temperature effects on ZnO electrodeposition [J].

Goux, A ;

Pauporté, T ;

Chivot, J ;

Lincot, D .

ELECTROCHIMICA ACTA, 2005, 50 (11) :2239-2248

[5] Electrochemical synthesis and optical properties of ZnO thin film on In2O3:Sn (ITO)-coated glass [J].

Gu, Changdong ;

Li, Jun ;

Lian, Jianshe ;

Zheng, Guoqu .

APPLIED SURFACE SCIENCE, 2007, 253 (17) :7011-7015

[6] Buffer layers in Cu(In,Ga)Se2 solar cells and modules [J].

Hariskos, D ;

Spiering, S ;

Powalla, M .

THIN SOLID FILMS, 2005, 480 :99-109

[7] Electrodeposited zinc oxide thin films: Nucleation and growth mechanism [J].

Inamdar, A. I. ;

Mujawar, S. H. ;

Sadale, S. B. ;

Sonavane, A. C. ;

Shelar, M. B. ;

Shinde, P. S. ;

Patil, P. S. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2007, 91 (10) :864-870

[8]

Izaki M, 1996, APPL PHYS LETT, V68, P2439, DOI 10.1063/1.116160

[9] Thermal annealing effect on optical properties of electrodeposited ZnO thin films [J].

Laurent, K. ;

Yu, D. P. ;

Tusseau-Nenez, S. ;

Leprince-Wang, Y. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (19)

[10] RF sputter deposition of the high-quality intrinsic and n-type ZnO window layers for Cu(In,Ga)Se2-based solar cell applications [J].

Lee, JC ;

Kang, KH ;

Kim, SK ;

Yoon, KH ;

Park, IJ ;

Song, J .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2000, 64 (02) :185-195

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