Fabrication of Ultrathin Bi2S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors

被引：219

作者：

Chen, Guihuan ^{[1
]}

Yu, Yongqiang ^{[1
,2
]}

Zheng, Kun ^{[2
]}

Ding, Tao ^{[1
]}

Wang, Wenliang ^{[1
]}

Jiang, Yang ^{[2
]}

Yang, Qing ^{[1
]}

机构：

[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Synerget Innovat Ctr Quantum Informat & Quantum P, Lab Nanomat Energy Convers,Dept Chem, Hefei 230026, Anhui, Peoples R China

[2] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

来源：

SMALL | 2015年 / 11卷 / 24期

关键词：

BISMUTH SULFIDE BI2S3; ULTRAVIOLET PHOTODETECTORS; FACILE SYNTHESIS; LAYER MOS2; PHOTORESPONSE; GRAPHENE; NANOWIRES; NANORODS; GROWTH; FILMS;

D O I：

10.1002/smll.201403508

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ultrathin Bi2S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2S3-based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W-1, high detectivity of ≈1011 Jones, relatively fast response time of ≈10 μs, and high flexibility and durability. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2848 / 2855

页数：8

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