Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode

被引:6
作者
Li, B. K. [1 ]
Wang, M. J. [2 ]
Chen, K. J. [2 ]
Wang, J. N. [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon 852, Hong Kong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon 852, Hong Kong, Peoples R China
关键词
HEMTS; MODE;
D O I
10.1063/1.3622643
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of fluorine-plasma (F-plasma) implantation on the current-voltage (I-V) and electroluminescence (EL) characteristics of Ni/Au-AlGaN/GaN Schottky diodes have been investigated. The observed EL spectrum is dominated by the GaN near band edge emissions. The threshold current of the EL emission for F-plasma implanted diodes is significantly lower than that for the previously reported diodes without the F-plasma implantation. This reduction of threshold current results from the presence of negatively charged F-centers in AlGaN layer which leads to upward band bending of AlGaN layer and enhanced hole injection by multi-step tunneling process through AlGaN layer. The magnitude of the upward banding in AlGaN layer is estimated to be 0.36 eV by analyzing the forward-biased I-V characteristics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622643]
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页数:3
相关论文
共 15 条
[1]   Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures [J].
Arslan, Engin ;
Altindal, Semsettin ;
Ozcelik, Suleyman ;
Ozbay, Ekmel .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (07)
[2]   High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment [J].
Cai, Y ;
Zhou, YG ;
Chen, KJ ;
Lau, KM .
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) :435-437
[3]   Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode [J].
Cai, Yong ;
Zhou, Yugang ;
Lau, Kei May ;
Chen, Kevin J. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :2207-2215
[4]   A NEW AND SIMPLE-MODEL FOR GAAS HETEROJUNCTION FET GATE CHARACTERISTICS [J].
CHEN, CH ;
BAIER, SM ;
ARCH, DK ;
SHUR, MS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) :570-577
[5]   Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology [J].
Chen, Kevin J. ;
Zhou, Chunhua .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (02) :434-438
[6]   High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors [J].
Chen, Wanjun ;
Wong, King-Yuen ;
Huang, Wei ;
Chen, Kevin J. .
APPLIED PHYSICS LETTERS, 2008, 92 (25)
[7]   Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlxGa1-xN/GaN heterostructures [J].
Huang, Sen ;
Chen, Hongwei ;
Chen, Kevin J. .
APPLIED PHYSICS LETTERS, 2010, 96 (23)
[8]  
Li BK, 2008, PHYS STATUS SOLIDI C, V5, P1892, DOI [10.1002/pssc.200778459, 10.1002/pssc.2007784B9]
[9]   Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode [J].
Li, B. K. ;
Wang, M. J. ;
Chen, K. J. ;
Wang, J. N. .
APPLIED PHYSICS LETTERS, 2009, 95 (23)
[10]   Persistent photoconductivity and carrier transport in AlGaN/GaN heterostructures treated by fluorine plasma [J].
Li, B. K. ;
Ge, W. K. ;
Wang, J. N. ;
Chen, K. J. .
APPLIED PHYSICS LETTERS, 2008, 92 (08)