Thermal analysis of high power GaN-bawd light emitting diode

被引:0
作者
Guo, Debo [1 ]
Wang, Libin
Liu, Zhiqiang
Liang, Meng
Fan, Manning
Wang, Guohong
Wang, Liangchen
Li, Jinmin
机构
[1] Chinese Acad Sci, Engn Res Ctr Semicond Lighting, Beijing 100083, Peoples R China
来源
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES | 2008年 / 6841卷
关键词
GaN; thermal resistance; high power LED;
D O I
10.1117/12.760019
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this paper we present thermal analysis of three different-structured high power LEDs. The thermal resistance of different-structured LEDs was determined. The results indicated that the thermal resistance severely depended on the number of bumps for flip-chip LEDs. One could get lower thermal resistance for flip-chip LEDs than that for conventional and vertical LEDs by selecting appropriate number of bumps in theory. But considering the practical process of LEDs' fabrication, the conventional LEDs because of the simple making process showed more stable and lower thermal resistance. There existed the same problems as flip-chip LEDs' for vertical LEDs. Maybe electroplate copper was the effective way to get good thermal characteristic.
引用
收藏
页数:5
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