Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review

被引:75
作者
Ajayan, J. [1 ]
Nirmal, D. [2 ]
Mohankumar, P. [3 ]
Mounika, B. [1 ]
Bhattacharya, Sandip [1 ]
Tayal, Shubham [1 ]
Fletcher, A. S. Augustine [2 ]
机构
[1] SR Univ, Warangal, Telangana, India
[2] Karunya Inst Technol & Sci, Coimbatore, Tamilnadu, India
[3] Sona Coll Technol, Salem, Tamilnadu, India
关键词
AlGaN Channel; AlGaN; GaN on Si HEMTs (AGS-HEMT); Au-free technology; Contact resistance (R-c); Micromachined-technology; Plasma treatment; HIGH BREAKDOWN-VOLTAGE; MOBILITY TRANSISTORS; GAN-HEMTS; RESISTIVITY SILICON; TEMPERATURE-DEPENDENCE; CHANNEL HEMTS; BUFFER LAYERS; SI SUBSTRATE; PERFORMANCE; MICROWAVE;
D O I
10.1016/j.mssp.2022.106982
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In order to handle high power with good thermal stability at RF & microwave frequencies wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN channel HEMTs (High electron mobility transistors) have become most promising devices for RF power and switching electronic applications due to their unique features such as high 2DEG density, excellent breakdown field, good 2DEG mobility & saturation drift velocity and extremely low ON-resistance. GaN & AlGaN channel HEMTs are widely fabricated on SiC or sap-phire wafers, but their low wafer size & high fabrication cost hinder the commercialization of these devices. In recent years, Si-wafers have emerged as a pathway for the commercialization of GaN & AlGaN channel HEMTs due to their large wafer size, low cost fabrication & capability to integrate GaN or AlGaN channel power HEMTs on advanced Si-technology. Therefore, in this article, we critically reviewed the issues that need to be addressed while transferring GaN or AlGaN channel HEMTs on Si-wafers. This article also highlights the popular archi-tectures of GaN & AlGaN channel HEMTs on Si-wafers, techniques for enhancing their breakdown performance such as buffer layer engineering, drain contact technologies & surface passivation, challenges in fabrication and reliability issues such as irradiation & thermal degradations.
引用
收藏
页数:26
相关论文
共 124 条
[1]   Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate [J].
Altuntas, Philippe ;
Lecourt, Francois ;
Cutivet, Adrien ;
Defrance, Nicolas ;
Okada, Etienne ;
Lesecq, Marie ;
Rennesson, Stephanie ;
Agboton, Alain ;
Cordier, Yvon ;
Hoel, Virginie ;
De Jaeger, Jean-Claude .
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (04) :303-305
[2]   Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation [J].
Anderson, Travis J. ;
Koehler, Andrew D. ;
Greenlee, Jordan D. ;
Weaver, Bradley D. ;
Mastro, Michael A. ;
Hite, Jennifer K. ;
Eddy, Charles R., Jr. ;
Kub, Francis J. ;
Hobart, Karl D. .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (08) :826-828
[3]   High-mobility sputtered F-doped ZnO films as good-performance transparent-electrode layers [J].
Anh Tuan Thanh Pham ;
Nhut Minh Ngo ;
Oanh Kieu Truong Le ;
Dung Van Hoang ;
Truong Huu Nguyen ;
Thang Bach Phan ;
Vinh Cao Tran .
JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 2021, 6 (03) :446-452
[4]   Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate [J].
Arulkumaran, S. ;
Liu, Z. H. ;
Ng, G. I. ;
Cheong, W. C. ;
Zeng, R. ;
Bu, J. ;
Wang, H. ;
Radhakrishnan, K. ;
Tan, C. L. .
THIN SOLID FILMS, 2007, 515 (10) :4517-4521
[5]   Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-μm T-gate AlGaN/GaN HEMTs on Silicon by (NH4)2Sx Treatment [J].
Arulkumaran, S. ;
Ng, G. I. ;
Vicknesh, S. .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (11) :1364-1366
[6]   Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate [J].
Arulkumaran, Subramaniam ;
Ng, Geok Ing ;
Vicknesh, Sahmuganathan ;
Wang, Hong ;
Ang, Kian Siong ;
Tan, Joyce Pei Ying ;
Lin, Vivian Kaixin ;
Todd, Shane ;
Lo, Guo-Qiang ;
Tripathy, Sudhiranjan .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (11)
[7]   Improved recess-ohmics in AlGaN/GaN high-electron-mobility transistors with AlN spacer layer on silicon substrate [J].
Arulkumaran, Subramaniam ;
Ing, Ng Geok ;
Sahmuganathan, Vicknesh ;
Liu Zhihong ;
Maung, Bryan .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10) :2412-2414
[8]   Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon [J].
Benakaprasad, Bhavana ;
Eblabla, Abdalla M. ;
Li, Xu ;
Crawford, Kevin G. ;
Elgaid, Khaled .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (03) :863-868
[9]   Analog performance of GaN/AlGaN high-electron-mobility transistors [J].
Bergamim, Luis Felipe de Oliveira ;
Parvais, Bertrand ;
Simoen, Eddy ;
de Andrade, Maria Gloria Cano .
SOLID-STATE ELECTRONICS, 2021, 183
[10]   Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs [J].
Borga, Matteo ;
Meneghini, Matteo ;
Rossetto, Isabella ;
Stoffels, Steve ;
Posthuma, Niels ;
Van Hove, Marleen ;
Marcon, Denis ;
Decoutere, Stefaan ;
Meneghesso, Gaudenzio ;
Zanoni, Enrico .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (09) :3609-3614