Ortho and para interstitial H2 in silicon

被引：0

作者：

Lavrov, EV

Weber, J

机构：

[1] Tech Univ Dresden, D-01062 Dresden, Germany

[2] IRE RAS, Moscow 101999, Russia

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 340卷

关键词：

hydrogen; molecule; Si; Raman scattering;

D O I：

10.1016/j.physb.2003.09.161

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

H-2 trapped at the interstitial T site in Si is studied by Raman scattering. Both ortho and para nuclear-spin states of H-2 and D-2 have been observed. It is shown that the Raman signals of H-2 and D-2 in the J = 0 state, where J is the rotational quantum number, disappear preferentially from the spectra during laser excitation or prolonged storage at room temperature in the dark. This surprising behavior is tentatively explained by different diffusion rates of H-2 in the J = 0 and 1 states. (C) 2003 Elsevier B.V. All rights reserved.

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页码：646 / 649

页数：4

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